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 MBR2030CTL
Preferred Device
SWITCHMODETM Dual Schottky Power Rectifier
The MBR2030CTL employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features http://onsemi.com
* * * * * * * * * *
Pb-Free Package is Available* Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150C) 150C Operating Junction Temperature Matched Dual Die Construction (10 A per Leg or 20 A per Package) High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94, V-0 @ 0.125 in
SCHOTTKY BARRIER RECTIFIER 20 AMPERES 30 VOLTS
1 2, 4 3
MARKING DIAGRAM
4
Mechanical Characteristics
* Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds Leads are Readily Solderable
1 2
TO-220AB CASE 221A PLASTIC
AY WW B2030
3 A Y WW B2030 = Assembly Location = Year = Work Week = Device Code
ORDERING INFORMATION
Device MBR2030CTL MBR2030CTLG Package TO-220 TO-220 (Pb-Free) Shipping 50 Units/Tube 50 Units/Tube
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2004
1
September, 2004 - Rev. 2
Publication Order Number: MBR2030CTL/D
MBR2030CTL
MAXIMUM RATINGS (Per Leg)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Operating Junction Temperature Storage Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFSM IRRM TJ Tstg dv/dt Val e Value 30 Unit V
10 150 1.0 *65 to +150 *65 to +175 1000
A A A C C V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Per Leg)
Thermal Resistance, Junction-to-Case RqJC 2.0 C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Maximum Instantaneous Forward Voltage (Note 1) (iF = 10 Amps, TC = 25C) (iF = 10 Amps, TC = 150C) (iF = 20 Amps, TC = 25C) (iF = 20 Amps, TC = 150C) Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 25C) (Rated DC Voltage, TC = 100C) (Rated DC Voltage, TC = 125C) 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. vF 0.52 0.40 0.58 0.48 iR 5.0 40 75 mA V
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2
MBR2030CTL
100
I , REVERSE CURRENT (mA) R
50 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 30 150C TJ = 25C 100C
20
10
100 40 20 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 0 5
TJ = 150C TJ = 100C
TJ = 25C 20 10 15 25 VR REVERSE VOLTAGE (VOLTS) 30 35
5 3 2 I , FORWARD CURRENT (AMPS) F(AV) 16 14 12 10 8 6 4 2 0 120
Figure 2. Typical Reverse Current (Per Leg)
1
RATED VOLTAGE APPLIED RqJC = 2C/W
0.5 0.3 0.2
dc SQUARE WAVE
0.1 0 0.2 0.4 0.6 0.8 1 vF, INSTANTANEOUS VOLTAGE (VOLTS) 1.2 1.4
130
140
150
160
TC CASE TEMPERATURE (C)
Figure 1. Typical Forward Voltage (Per Leg)
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
Figure 3. Current Derating, Case
I , AVERAGE FORWARD CURRENT (AMPS) F (AV)
10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 dc dc SQUARE WAVE
RATED VOLTAGE APPLIED RqJA = 16C/W RqJA = 60C/W (N0 HEATSINK)
8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 IF(AVG), AVERAGE FORWARD CURRENT (AMPS) 20 10 5 SINE WAVE TJ = 100C
I PK +p I AV
SQUARE WAVE dc
120
140
160
180
200
TA, AMBIENT TEMPERATURE (C)
Figure 4. Current Derating, Ambient
I
F(AVE)
Figure 5. Forward Power Dissipation
http://onsemi.com
3
MBR2030CTL
HIGH FREQUENCY OPERATION
10K 5000 C, CAPACITANCE (pF) 3000 2000 1000 500 300 200 100 0.5 TJ = 25C f = 1 MHz
Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 6.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.
1
2
3
5
10
20
30
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance
+150 V, 10 mAdc 2 kW
VCC
12 Vdc
12 V
100 2N2222
D.U.T.
+
4 mF
2 ms 1 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 2N6277 100 CARBON
1 CARBON
1N5817
Figure 7. Test Circuit for dv/dt and Reverse Surge Current
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4
MBR2030CTL
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
http://onsemi.com
5
MBR2030CTL
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
6
MBR2030CTL/D


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